UPA2727UT1A-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 16A 8DFN
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with UPA2727UT1A-E1-AY, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, UPA2727UT1A-E1-AY meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
Related Products
IXYS
IXFJ80N25X3
Panjit International Inc.
PJMD990N65EC_L2_00001
Vishay Siliconix
SI4114DY-T1-E3
onsemi
NTNS2K1P021ZTCG
Microchip Technology
MIC94053YC6-TR
Toshiba Semiconductor and Storage
TK290A65Y,S4X
onsemi
NTD4809NA-35G
Taiwan Semiconductor Corporation
TSM05N03CW RPG
NXP USA Inc.
BUK954R4-80E,127
Infineon Technologies