UPA2766T1A-E2-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 130A 8HVSON
$0.83
Available to order
Reference Price (USD)
1+
$0.82793
500+
$0.8196507
1000+
$0.8113714
1500+
$0.8030921
2000+
$0.7948128
2500+
$0.7865335
Exquisite packaging
Discount
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Discover high-performance UPA2766T1A-E2-AY from Renesas Electronics America Inc, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, UPA2766T1A-E2-AY delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.82mOhm @ 39A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HVSON (5x5.4)
- Package / Case: 8-PowerVDFN
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