Shopping cart

Subtotal: $0.00

US1B-E3/5AT

Vishay General Semiconductor - Diodes Division
US1B-E3/5AT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Powerex Inc.

R5010210XXWA

Vishay General Semiconductor - Diodes Division

S4PBHM3_A/I

Microchip Technology

JANTXV1N4150-1

Panjit International Inc.

BR310F_R1_00001

Taiwan Semiconductor Corporation

SK810C

Micro Commercial Co

FS1ME-TP

Microchip Technology

HSM8100JE3/TR13

Vishay General Semiconductor - Diodes Division

VS-85HFR120M

Diotec Semiconductor

P2000D

Global Power Technology-GPT

G5S06505CT

Top