Shopping cart

Subtotal: $0.00

US1J-E3/5AT

Vishay General Semiconductor - Diodes Division
US1J-E3/5AT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO214AC
$0.40
Available to order
Reference Price (USD)
7,500+
$0.10557
15,000+
$0.09737
37,500+
$0.09190
52,500+
$0.08916
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Rohm Semiconductor

RFVS8TG6SGC9

Microchip Technology

JANTX1N6642US/TR

Comchip Technology

CDSQR400B-HF

Vishay General Semiconductor - Diodes Division

VS-10TQ045STRL-M3

Taiwan Semiconductor Corporation

RS3GB-T R5G

NXP USA Inc.

1PS74SB23,115

Comchip Technology

CDBUR0230L

Diodes Incorporated

SBR10B45P5-7D

Vishay General Semiconductor - Diodes Division

VS-2ENH02-M3/85A

Top