Shopping cart

Subtotal: $0.00

V10P10HM3_A/H

Vishay General Semiconductor - Diodes Division
V10P10HM3_A/H Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 10A TO277A
$0.88
Available to order
Reference Price (USD)
1,500+
$0.39125
3,000+
$0.35918
7,500+
$0.34849
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-8EWH06FNHM3

STMicroelectronics

STTH112RL

Vishay General Semiconductor - Diodes Division

P600J-E3/54

Vishay General Semiconductor - Diodes Division

VS-40HFLR40S05

onsemi

RS1DFA

Vishay General Semiconductor - Diodes Division

VS-5EWH06FNTR-M3

Microchip Technology

JANTX1N5416US/TR

Vishay General Semiconductor - Diodes Division

SS36-E3/9AT

Panjit International Inc.

S3G_R1_00001

Taiwan Semiconductor Corporation

SFF1606G

Top