V12P10-M3/87A
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 12A TO277A
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Vishay General Semiconductor - Diodes Division's V12P10-M3/87A Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Vishay General Semiconductor - Diodes Division for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
BY203-12STAP
Diotec Semiconductor
S1M-Q-CT
STMicroelectronics
STPS2L40U
onsemi
RS1MFA
Taiwan Semiconductor Corporation
BAV20WS-G RRG
Microchip Technology
CDLL0.5A30/TR
Vishay General Semiconductor - Diodes Division
VS-E5TX0812-M3
Taiwan Semiconductor Corporation
RS5J-T M6G
Vishay General Semiconductor - Diodes Division
VF20100S-E3/4W
GeneSiC Semiconductor