VB20120SG-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO263AB
$0.72
Available to order
Reference Price (USD)
800+
$0.92804
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with VB20120SG-E3/8W Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
onsemi
1N914TR
Vishay General Semiconductor - Diodes Division
VS-15ETU12-M3
Panjit International Inc.
1N4148WS-AU_R1_000A1
Microchip Technology
JANTX1N5806
Diodes Incorporated
SBR12U120P5-13
Comchip Technology
CDBFR0130
Vishay General Semiconductor - Diodes Division
SS5P6-M3/87A
Comchip Technology
FR203GB-G
Micro Commercial Co
SMD34HE1-TP
Taiwan Semiconductor Corporation