VB30M120C-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30A 120V TO-263AB
$0.83
Available to order
Reference Price (USD)
2,400+
$0.70084
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality VB30M120C-E3/8W from Vishay General Semiconductor - Diodes Division, a leading solution in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Our products are engineered for reliability and efficiency, making them ideal for various industrial and commercial uses. The VB30M120C-E3/8W features excellent performance in rectification and array configurations, ensuring stable and consistent operation. Whether you need components for power supplies, converters, or other electronic devices, Vishay General Semiconductor - Diodes Division's diodes are the perfect choice. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Vishay General Semiconductor - Diodes Division
VS-60CTQ040-M3
Infineon Technologies
DD89N16KHPSA1
Diodes Incorporated
BAV199Q-13-F
SMC Diode Solutions
STF30200C
Diodes Incorporated
SBR20A120CTFP
Vishay General Semiconductor - Diodes Division
VS-10CSH01HM3/86A
Panjit International Inc.
MBR20100DC-AU_R2_000A1
GeneSiC Semiconductor
MSRTA30060A
Panjit International Inc.
BAV199_R1_00001
Nexperia USA Inc.