VBT1080C-E3/8W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 80V TO-263AB
$0.51
Available to order
Reference Price (USD)
1,600+
$0.53630
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic projects with the VBT1080C-E3/8W by Vishay General Semiconductor - Diodes Division, a top-tier option in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. Known for their durability and superior performance, these diodes are perfect for demanding applications. The VBT1080C-E3/8W offers fast switching, low forward voltage, and high surge capability, making it suitable for power management and signal processing. Trust Vishay General Semiconductor - Diodes Division for components that meet the highest industry standards. Reach out now to learn more and place your order!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 80 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
STMicroelectronics
STPS60L45CW
Vishay General Semiconductor - Diodes Division
VFT4045C-M3/4W
Vishay General Semiconductor - Diodes Division
BYT28B-300-E3/81
Panjit International Inc.
BAV199W_R1_00001
Diodes Incorporated
SBR20A200CTB
NTE Electronics, Inc
NTE623
Vishay General Semiconductor - Diodes Division
VS-VSKC270-30PBF
onsemi
MBRB2535CTLT4G
Panjit International Inc.
BAV170-AU_R1_000A1
Rohm Semiconductor