VBT2060G-E3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 60V TO-263AB
$0.43
Available to order
Reference Price (USD)
2,000+
$0.36778
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the VBT2060G-E3/4W from Vishay General Semiconductor - Diodes Division, a leading product in the Diodes - Rectifiers - Arrays category of Discrete Semiconductor Products. These diodes provide exceptional rectification and array performance, backed by advanced technology and rigorous testing. The VBT2060G-E3/4W is known for its high efficiency, low power dissipation, and long service life. Vishay General Semiconductor - Diodes Division guarantees quality and reliability in every component. Contact us today to learn more and place your order!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 60 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Vishay General Semiconductor - Diodes Division
VS-20CTQ040S-M3
Diodes Incorporated
SDM03MT40-7-F
STMicroelectronics
STTH9012TV2
SMC Diode Solutions
BAT54C
Vishay General Semiconductor - Diodes Division
BAT54S-HE3-08
Rohm Semiconductor
RBR40NS60AFHTL
Yangzhou Yangjie Electronic Technology Co.,Ltd
BAT54A-F2-0000HF
Toshiba Semiconductor and Storage
1SS384TE85LF
Vishay General Semiconductor - Diodes Division
BAT54S-E3-18
GeneSiC Semiconductor