VI20120C-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-262AA
$0.76
Available to order
Reference Price (USD)
1,000+
$0.69120
Exquisite packaging
Discount
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The VI20120C-M3/4W by Vishay General Semiconductor - Diodes Division is a high-performance diode in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Offering robust construction and advanced features, this product is perfect for engineers and designers seeking reliable components. The VI20120C-M3/4W excels in efficiency, with minimal power loss and high-speed switching capabilities. Whether for industrial machinery or consumer electronics, Vishay General Semiconductor - Diodes Division delivers unmatched quality. Submit your inquiry today to find out how this product can meet your needs!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262AA
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