VS-10ETF12S-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A D2PAK
$0.97
Available to order
Reference Price (USD)
1,000+
$0.98381
Exquisite packaging
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Optimize your circuitry with Vishay General Semiconductor - Diodes Division's VS-10ETF12S-M3 Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Vishay General Semiconductor - Diodes Division guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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