VS-4ESH01-M3/86A
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 4A TO277A
$0.63
Available to order
Reference Price (USD)
1,500+
$0.25264
3,000+
$0.23300
7,500+
$0.21991
10,500+
$0.21337
Exquisite packaging
Discount
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Discover high-quality VS-4ESH01-M3/86A Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Vishay General Semiconductor - Diodes Division's VS-4ESH01-M3/86A delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
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