VS-4ESH02HM3/86A
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A TO277A
$0.70
Available to order
Reference Price (USD)
1,500+
$0.31147
3,000+
$0.28594
7,500+
$0.27743
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with VS-4ESH02HM3/86A Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
B340A-E3/61T
Vishay General Semiconductor - Diodes Division
BAS382-TR3
Diodes Incorporated
ZLLS2000QTC
Vishay General Semiconductor - Diodes Division
SS1P5L-M3/85A
Vishay General Semiconductor - Diodes Division
VS-3EMU06-M3/5AT
Diodes Incorporated
1N5819HWQ-7-F
Infineon Technologies
D291S45TXPSA1
Diodes Incorporated
RS1M-13-F
Vishay General Semiconductor - Diodes Division
VSSA310S-M3/61T
Vishay General Semiconductor - Diodes Division