VS-4EWH02FNTR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A D-PAK
$0.85
Available to order
Reference Price (USD)
2,000+
$0.34675
6,000+
$0.33643
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's VS-4EWH02FNTR-M3 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
onsemi
FFSB2065B-F085
Panjit International Inc.
SB640_T0_00001
Vishay General Semiconductor - Diodes Division
VS-300U40A
Taiwan Semiconductor Corporation
SS210H
STMicroelectronics
STBR3008WY
Diotec Semiconductor
RAL1D
NTE Electronics, Inc
NTE6044
Vishay General Semiconductor - Diodes Division
P600G-E3/54
Comchip Technology
CDBQR54
Rohm Semiconductor