Shopping cart

Subtotal: $0.00

VS-8ETH06-1-M3

Vishay General Semiconductor - Diodes Division
VS-8ETH06-1-M3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO262
$0.53
Available to order
Reference Price (USD)
1,000+
$0.55170
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

GeneSiC Semiconductor

1N1184AR

Solid State Inc.

1N2159

Vishay General Semiconductor - Diodes Division

SD103AWS-HG3-18

NTE Electronics, Inc

NTE621

Rohm Semiconductor

SCS206AGC17

Panjit International Inc.

US1KAFC_R1_00001

Vishay General Semiconductor - Diodes Division

BYW32-TR

Vishay General Semiconductor - Diodes Division

1N4151TAP

Vishay General Semiconductor - Diodes Division

VS-16EDH02-M3/I

Microchip Technology

1N3611E3/TR

Top