VS-8EWS08STRR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A D-PAK
$1.59
Available to order
Reference Price (USD)
1+
$1.58549
500+
$1.5696351
1000+
$1.5537802
1500+
$1.5379253
2000+
$1.5220704
2500+
$1.5062155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with VS-8EWS08STRR-M3 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
1N6479-E3/97
Renesas Electronics America Inc
RKR0303AKJ#P1
Yangzhou Yangjie Electronic Technology Co.,Ltd
SSL310B-F1-3000HF
Microchip Technology
1N5712UR-1/TR
Panjit International Inc.
SB33AFC_R1_00001
Vishay General Semiconductor - Diodes Division
V10150S-M3/4W
PN Junction Semiconductor
P3D06010T2
Vishay General Semiconductor - Diodes Division
SE10FG-M3/H
Microchip Technology
CDLL645/TR
Taiwan Semiconductor Corporation