VS-C08ET07T-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 650V 8A TO220AC
$3.38
Available to order
Reference Price (USD)
1+
$3.38000
500+
$3.3462
1000+
$3.3124
1500+
$3.2786
2000+
$3.2448
2500+
$3.211
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuitry with Vishay General Semiconductor - Diodes Division's VS-C08ET07T-M3 Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. Vishay General Semiconductor - Diodes Division guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 45 µA @ 650 V
- Capacitance @ Vr, F: 355pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
RS1D-M3/5AT
Vishay General Semiconductor - Diodes Division
VS-T70HFL10S10
Vishay General Semiconductor - Diodes Division
RGP10M-E3/54
onsemi
FFSB2065BDN-F085
IXYS
DHG30I600HA
Diodes Incorporated
US1JDF-13
Vishay General Semiconductor - Diodes Division
UF4006-M3/73
GeneSiC Semiconductor
1N1190AR
Microchip Technology
1N4944/TR
KYOCERA AVX