VS-C12ET07T-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 650V 12A TO220AC
$4.98
Available to order
Reference Price (USD)
1+
$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's VS-C12ET07T-M3 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 65 µA @ 650 V
- Capacitance @ Vr, F: 515pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Infineon Technologies
IDW20G65C5XKSA1
Comchip Technology
CDBF0330
Panjit International Inc.
ERT1CAFC_R1_00001
Solid State Inc.
16FR120
Rohm Semiconductor
RB168VWM-60TFTR
onsemi
MUR1560H
Vishay General Semiconductor - Diodes Division
SS16HE3_B/I
Taiwan Semiconductor Corporation
S1JLSHRVG
Panjit International Inc.
SBA230AH_R1_00001
Vishay General Semiconductor - Diodes Division