VS-ETF150Y65N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 201A 600W
$68.56
Available to order
Reference Price (USD)
1+
$71.99000
10+
$68.38900
25+
$66.58880
100+
$61.63970
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your project's performance with the VS-ETF150Y65N IGBT Module by Vishay General Semiconductor - Diodes Division. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Vishay General Semiconductor - Diodes Division power your innovations send your inquiry now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 201 A
- Power - Max: 600 W
- Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT100BB60T3G
Infineon Technologies
FP25R12W1T7B3BPSA1
Infineon Technologies
DF1400R12IP4DBOSA1
Microchip Technology
APT100GN120JDQ4
Microchip Technology
APTGT200DA60T3AG
Infineon Technologies
FS100R07PE4BOSA1
Infineon Technologies
FS35R12W1T4B11BOMA1
Infineon Technologies
FS3L40R07W2H5FB11BOMA1
Infineon Technologies
FS400R07A3E3BOMA1
Infineon Technologies