VS-ETH3006STRR-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO263AB
$1.17
Available to order
Reference Price (USD)
800+
$1.06505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with VS-ETH3006STRR-M3 Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 26 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Microchip Technology
1N5550USE3/TR
Diotec Semiconductor
BYP35K1
Comchip Technology
CDBUR40
Vishay General Semiconductor - Diodes Division
SA2D-E3/5AT
Diotec Semiconductor
SL1J-CT
Vishay General Semiconductor - Diodes Division
MUR460-E3/54
Vishay General Semiconductor - Diodes Division
SS3P3HM3/85A
Sanken
SJPL-D2VL
Nexperia USA Inc.
BAS521,115
Nexperia USA Inc.