VS-GT100TP60N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 160A INT-A-PAK
$79.33
Available to order
Reference Price (USD)
24+
$209.29708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency in your power electronics with the VS-GT100TP60N IGBT Module by Vishay General Semiconductor - Diodes Division. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Vishay General Semiconductor - Diodes Division leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 417 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 7.71 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
Related Products
Infineon Technologies
FZ1600R17KF6CB2NOSA1
Infineon Technologies
FP35R12W2T4BOMA1
Microchip Technology
APTGT100DA120T1G
Microchip Technology
APTGTQ150TA65TPG
Infineon Technologies
IFS75B12N3E4B31BOSA1
Infineon Technologies
FS100R07N3E4BOSA1
Microchip Technology
MSCGLQ75H120CTBL3NG
IXYS
MWI15-12A7
Infineon Technologies
FP75R12KT4PBPSA1
Microchip Technology