VS-GT180DA120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 281A 1087W SOT227
$47.59
Available to order
Reference Price (USD)
1+
$44.89000
10+
$41.88400
30+
$40.12800
100+
$36.36600
250+
$35.11200
Exquisite packaging
Discount
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The VS-GT180DA120U from Vishay General Semiconductor - Diodes Division sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Vishay General Semiconductor - Diodes Division for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 281 A
- Power - Max: 1087 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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