VS-GT80DA60U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 123A 454W SOT227
$22.97
Available to order
Reference Price (USD)
1+
$22.96800
500+
$22.73832
1000+
$22.50864
1500+
$22.27896
2000+
$22.04928
2500+
$21.8196
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency in your power electronics with the VS-GT80DA60U IGBT Module by Vishay General Semiconductor - Diodes Division. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Vishay General Semiconductor - Diodes Division leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 123 A
- Power - Max: 454 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 80A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 10.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
Related Products
Infineon Technologies
FS450R12KE4BOSA1
Infineon Technologies
FP35R12U1T4BPSA1
Infineon Technologies
FP20R06YE3B4BOMA1
Microchip Technology
APTGT100H120G
Microchip Technology
MSCGLQ200A65TG
Fairchild Semiconductor
FMM7G20US60I
Microchip Technology
APTGT300SK60G
Infineon Technologies
DDB6U50N16W1RPBPSA1
Microchip Technology
APTGT50DH60T1G
Microchip Technology