VT6M1T2CR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 20V 0.1A VMT6
$0.43
Available to order
Reference Price (USD)
8,000+
$0.05580
16,000+
$0.04960
24,000+
$0.04650
56,000+
$0.04340
Exquisite packaging
Discount
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Optimize your electronic circuits with Rohm Semiconductor s VT6M1T2CR, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how VT6M1T2CR can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100mA
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
- Power - Max: 120mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: VMT6
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