W632GU8NB-12 TR
Winbond Electronics
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X8, 800MH
$4.41
Available to order
Reference Price (USD)
1+
$4.41496
500+
$4.3708104
1000+
$4.3266608
1500+
$4.2825112
2000+
$4.2383616
2500+
$4.194212
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust Winbond Electronics W632GU8NB-12 TR Memory ICs for all your critical storage needs, offering industry-leading technology. Designed for applications in military, healthcare, and telecommunications, these ICs feature secure data retention, high cycle endurance, and broad compatibility. Winbond Electronics W632GU8NB-12 TR sets the standard in memory innovation. Place your inquiry now and benefit from our expertise and support!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 800 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 20 ns
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-VFBGA
- Supplier Device Package: 78-VFBGA (8x10.5)
Related Products
Adesto Technologies
AT25SL641-MHE-T
STMicroelectronics
M24512-DFCS6TP/K
Infineon Technologies
S25FL128SAGBHI300
ABLIC Inc.
S-34TS04A0B-A8T5U5
Infineon Technologies
CY7C0853AV-133BBC
Renesas Electronics America Inc
71V67703S85BQGI
ISSI, Integrated Silicon Solution Inc
IS43TR16512AL-15HBL
Alliance Memory, Inc.
AS7C4096A-15JIN
Infineon Technologies
CY62167EV18LL-55BVIT
Advanced Micro Devices