W66BP6NBUAFJ
Winbond Electronics
Winbond Electronics
2GB LPDDR4, X16, 1600MHZ, -40C~1
$5.75
Available to order
Reference Price (USD)
1+
$5.75160
500+
$5.694084
1000+
$5.636568
1500+
$5.579052
2000+
$5.521536
2500+
$5.46402
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's potential with Winbond Electronics W66BP6NBUAFJ Memory ICs, crafted for precision and performance. Suitable for robotics, surveillance systems, and smart grids, these ICs boast features like non-volatile storage, high-speed interfaces, and minimal power draw. Winbond Electronics W66BP6NBUAFJ delivers unmatched quality. Start a conversation with us today to explore customized solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
Related Products
Everspin Technologies Inc.
MR2A08AYS35
Silicon Motion, Inc.
SM662GXE BEST
ISSI, Integrated Silicon Solution Inc
IS42VM16400M-6BLI-TR
ISSI, Integrated Silicon Solution Inc
IS46DR16640B-25DBLA1-TR
Alliance Memory, Inc.
AS7C316096C-10TIN
Winbond Electronics
W632GG6NB09I TR
STMicroelectronics
M93C56-RDW6TP
Flexxon Pte Ltd
FEMC016GTTE7-T13-16
Winbond Electronics
W63AH2NBVACI TR
Microchip Technology