W66BQ6NBUAGJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
$5.34
Available to order
Reference Price (USD)
1+
$5.34000
500+
$5.2866
1000+
$5.2332
1500+
$5.1798
2000+
$5.1264
2500+
$5.073
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your memory solutions with Winbond Electronics W66BQ6NBUAGJ TR ICs, built for speed and reliability. Perfect for data centers, automotive infotainment, and wearable tech, these ICs include features such as high bandwidth, low latency, and long-term durability. Winbond Electronics W66BQ6NBUAGJ TR is your trusted partner in advanced memory technology. Inquire now to discover how we can meet your specific needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.866 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
Related Products
ISSI, Integrated Silicon Solution Inc
IS43LR32800G-6BL
Fairchild Semiconductor
NM24C03UM8X
Flip Electronics
CY7C0852AV-167AXC
Infineon Technologies
S29GL256N11FAI010
ISSI, Integrated Silicon Solution Inc
IS43TR16640CL-107MBL-TR
Renesas Electronics America Inc
R1RP0416DGE-2PI#B1
Microchip Technology
93C56B-I/MS
ISSI, Integrated Silicon Solution Inc
IS42S83200J-7TLI
Microchip Technology
AT25128B-XHL-B
Alliance Memory, Inc.