W947D2HBJX6E TR
Winbond Electronics
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.67
Available to order
Reference Price (USD)
2,500+
$2.18391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Winbond Electronics W947D2HBJX6E TR Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Winbond Electronics W947D2HBJX6E TR ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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