W987D2HBJX6E TR
Winbond Electronics
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.67
Available to order
Reference Price (USD)
2,500+
$2.18391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Winbond Electronics W987D2HBJX6E TR Memory ICs deliver cutting-edge technology for modern applications. Perfect for automotive, telecommunications, and IoT devices, these ICs offer high reliability and low latency. Notable features are extended lifecycle, wide temperature range, and compatibility with multiple interfaces. Choose Winbond Electronics W987D2HBJX6E TR for superior memory solutions. Get in touch with us today to discuss your project needs!
Specifications
- Product Status: Last Time Buy
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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