Shopping cart

Subtotal: $0.00

WAS350M12BM3

Wolfspeed, Inc.
WAS350M12BM3 Preview
Wolfspeed, Inc.
SIC, MODULE, 350A, 1200V, 62MM,
$913.52
Available to order
Reference Price (USD)
1+
$913.52000
500+
$904.3848
1000+
$895.2496
1500+
$886.1144
2000+
$876.9792
2500+
$867.844
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 417A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 350A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 85mA
  • Gate Charge (Qg) (Max) @ Vgs: 844nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

Related Products

Infineon Technologies

IAUC60N04S6N031HATMA1

Fairchild Semiconductor

FDPC1012S

Vishay Siliconix

SIA931DJ-T1-GE3

Toshiba Semiconductor and Storage

SSM6P35AFE,LF

Linear Integrated Systems, Inc.

3N165 TO-99 6L

Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

Rohm Semiconductor

US6J2TR

Panjit International Inc.

PJL9807_R2_00001

Diodes Incorporated

DMN3190LDW-7

Top