WNSC10650T6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$3.68
Available to order
Reference Price (USD)
1+
$3.68000
500+
$3.6432
1000+
$3.6064
1500+
$3.5696
2000+
$3.5328
2500+
$3.496
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuitry with WeEn Semiconductors's WNSC10650T6J Single Rectifier Diodes, tailored for seamless integration and high reliability. These diodes excel in applications such as voltage clamping, freewheeling, and reverse polarity protection. With features like high surge withstand capacity and low thermal resistance, they are a must-have for any electronics engineer. WeEn Semiconductors guarantees top-tier quality and performance. Ready to take the next step? Reach out for a detailed consultation!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 328pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: 175°C (Max)
Related Products
onsemi
SMMSD914T1G
onsemi
RHRP30120-F102
Rohm Semiconductor
SCS210KGC
Panjit International Inc.
MBR1045_T0_00001
onsemi
FFSH3065A
Panjit International Inc.
PG101R_R2_00001
Taiwan Semiconductor Corporation
BAV20W RHG
Panjit International Inc.
MUR560M_AY_00001
Solid State Inc.
1N1346RA
onsemi