WNSC2D10650BJ
WeEn Semiconductors
WeEn Semiconductors
WNSC2D10650B/TO263/REEL 13" Q1/T
$3.06
Available to order
Reference Price (USD)
1+
$3.06000
500+
$3.0294
1000+
$2.9988
1500+
$2.9682
2000+
$2.9376
2500+
$2.907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality WNSC2D10650BJ Single Rectifier Diodes from WeEn Semiconductors, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, WeEn Semiconductors's WNSC2D10650BJ delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C
Related Products
Diodes Incorporated
D1G-T
Vishay General Semiconductor - Diodes Division
GP08J-E3/54
Diodes Incorporated
HER101-T
Diotec Semiconductor
SL1B
Panjit International Inc.
ER1AF_R1_00001
Vishay General Semiconductor - Diodes Division
AR3PD-M3/86A
Rohm Semiconductor
RFN2L6SDDTE25
Global Power Technology-GPT
G3S06503A
Diodes Incorporated
SBR8M100P5Q-13D
Microchip Technology