XP234N08013R-G
Torex Semiconductor Ltd
Torex Semiconductor Ltd
MOSFET N-CH 30V 800MA SOT323-3
$0.08
Available to order
Reference Price (USD)
1+
$0.08360
500+
$0.082764
1000+
$0.081928
1500+
$0.081092
2000+
$0.080256
2500+
$0.07942
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with XP234N08013R-G, a premium Transistors - FETs, MOSFETs - Single from Torex Semiconductor Ltd. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust XP234N08013R-G for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3A
- Package / Case: SC-70, SOT-323
Related Products
Renesas Electronics America Inc
2SK3290BNTL-E
onsemi
WPB4002
Toshiba Semiconductor and Storage
SSM3J15FV,L3F
Toshiba Semiconductor and Storage
TK11S10N1L,LQ
Alpha & Omega Semiconductor Inc.
AOB12N50L
Fairchild Semiconductor
FDD6512A
Harris Corporation
IRFF9222
Vishay Siliconix
SQJA80EP-T1_BE3
Infineon Technologies
IPB60R125CPATMA1
Infineon Technologies