ZHB6792TA
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN/2PNP 70V 1A SOT223
$1.32
Available to order
Reference Price (USD)
1,000+
$1.30935
2,000+
$1.21905
5,000+
$1.20400
Exquisite packaging
Discount
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Enhance your electronic systems with Diodes Incorporated's ZHB6792TA BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN, 2 PNP (H-Bridge)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 70V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 1.25W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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