ZTX601QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.42
Available to order
Reference Price (USD)
1+
$0.41805
500+
$0.4138695
1000+
$0.409689
1500+
$0.4055085
2000+
$0.401328
2500+
$0.3971475
Exquisite packaging
Discount
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Choose ZTX601QSTZ by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, ZTX601QSTZ is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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