ZTX855STZ
Diodes Incorporated
Diodes Incorporated
TRANS NPN 150V 4A E-LINE
$0.46
Available to order
Reference Price (USD)
2,000+
$0.51770
Exquisite packaging
Discount
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Choose ZTX855STZ by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, ZTX855STZ is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.2 W
- Frequency - Transition: 90MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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