ZVN4525E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 250V 230MA SOT-23-6
$0.91
Available to order
Reference Price (USD)
3,000+
$0.41285
6,000+
$0.38755
15,000+
$0.37490
30,000+
$0.36800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ZVN4525E6TA, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZVN4525E6TA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
- Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
- Vgs (Max): ±40V
- Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Vishay Siliconix
SI2337DS-T1-E3
Infineon Technologies
IRLR2908TRPBF
Nexperia USA Inc.
PSMN7R0-30MLC,115
Nexperia USA Inc.
BUK9609-75A,118
IXYS
IXFX120N30P3
onsemi
NVD5414NT4G-VF01
Nexperia USA Inc.
PSMN2R1-40PLQ
Infineon Technologies
IAUA250N04S6N007AUMA1
Diodes Incorporated
DMN31D5UFZ-7B
Panjit International Inc.