ZVNL110A
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 320MA TO92-3
$0.84
Available to order
Reference Price (USD)
1+
$0.90000
10+
$0.79000
100+
$0.61820
500+
$0.46800
1,000+
$0.38220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
ZVNL110A by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, ZVNL110A ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Vishay Siliconix
SI7461DP-T1-GE3
Rohm Semiconductor
SCT4026DRC15
Vishay Siliconix
SIE808DF-T1-E3
Infineon Technologies
IPW50R140CPFKSA1
onsemi
FDC655BN
Infineon Technologies
BSZ0803LSATMA1
Diodes Incorporated
DMNH4006SK3Q-13
onsemi
NTLJS4149PTBG
STMicroelectronics
STU2N80K5
onsemi