ZXMC10A816N8TC
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 100V 2A 8-SOIC
$1.07
Available to order
Reference Price (USD)
2,500+
$0.48720
5,000+
$0.46564
12,500+
$0.45024
25,000+
$0.44800
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Diodes Incorporated s ZXMC10A816N8TC, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for ZXMC10A816N8TC.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Diodes Incorporated