ZXMC3A16DN8QTA
Diodes Incorporated

Diodes Incorporated
MOSFET BVDSS: 25V~30V SO-8 T&R 0
$1.24
Available to order
Reference Price (USD)
1+
$1.23566
500+
$1.2233034
1000+
$1.2109468
1500+
$1.1985902
2000+
$1.1862336
2500+
$1.173877
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with Diodes Incorporated s ZXMC3A16DN8QTA, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for ZXMC3A16DN8QTA.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO