ZXMC3A16DN8TA
Diodes Incorporated

Diodes Incorporated
MOSFET N/P-CH 30V 8SOIC
$1.52
Available to order
Reference Price (USD)
500+
$0.91600
1,000+
$0.74000
2,500+
$0.69600
5,000+
$0.66520
12,500+
$0.64320
Exquisite packaging
Discount
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The ZXMC3A16DN8TA by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s ZXMC3A16DN8TA be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO