ZXMC6A09DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 60V 8-SOIC
$2.18
Available to order
Reference Price (USD)
500+
$1.27500
1,000+
$1.07700
2,500+
$1.01100
5,000+
$0.97800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMC6A09DN8TA by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s ZXMC6A09DN8TA be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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