ZXMHC3A01N8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 30V 8-SOIC
$1.14
Available to order
Reference Price (USD)
2,500+
$0.52200
5,000+
$0.49890
12,500+
$0.48240
Exquisite packaging
Discount
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The ZXMHC3A01N8TC from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, ZXMHC3A01N8TC delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 870mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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