ZXMN10A08E6TC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1.5A SOT26
$0.26
Available to order
Reference Price (USD)
1+
$0.26310
500+
$0.260469
1000+
$0.257838
1500+
$0.255207
2000+
$0.252576
2500+
$0.249945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance ZXMN10A08E6TC from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, ZXMN10A08E6TC delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
Related Products
Infineon Technologies
IPN70R750P7SATMA1
Infineon Technologies
IPA65R400CEXKSA1
Panjit International Inc.
PJW4P06A-AU_R2_000A1
onsemi
FQD6N25TM
Harris Corporation
IRFD123
Renesas Electronics America Inc
2SK3984-ZK-E1-AY
IXYS
IXTX170P10P
Rectron USA
RM2333A
IXYS
IXTY26P10T
NXP USA Inc.