ZXMN3A04DN8TA
Diodes Incorporated

Diodes Incorporated
MOSFET 2N-CH 30V 6.5A 8-SOIC
$1.91
Available to order
Reference Price (USD)
1+
$1.91000
500+
$1.8909
1000+
$1.8718
1500+
$1.8527
2000+
$1.8336
2500+
$1.8145
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s ZXMN3A04DN8TA, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, ZXMN3A04DN8TA provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of ZXMN3A04DN8TA.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
- Power - Max: 1.81W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO