ZXMN6A09DN8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 4.3A 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic applications with Diodes Incorporated s ZXMN6A09DN8TC, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of ZXMN6A09DN8TC today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Texas Instruments
TPIC1502DW
Trinamic Motion Control GmbH
TMC1340-SO
Alpha & Omega Semiconductor Inc.
AO4842L
Infineon Technologies
IRF8915
Infineon Technologies
IRF7304TR
Vishay Siliconix
SI1988DH-T1-GE3
Microsemi Corporation
APTM50TDUM65PG
Vishay Siliconix
SI3909DV-T1-GE3
Alpha & Omega Semiconductor Inc.
AO6804A_101
Infineon Technologies