ZXMN6A25DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 3.8A 8-SOIC
$1.44
Available to order
Reference Price (USD)
500+
$0.78776
1,000+
$0.63640
2,500+
$0.59856
5,000+
$0.57207
12,500+
$0.55315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN6A25DN8TA from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, ZXMN6A25DN8TA offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.8A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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