ZXTD09N50DE6TA
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 50V 1A SOT23-6
$1.05
Available to order
Reference Price (USD)
3,000+
$0.49900
6,000+
$0.47808
Exquisite packaging
Discount
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Achieve peak performance with Diodes Incorporated's ZXTD09N50DE6TA BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1.1W
- Frequency - Transition: 215MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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