ZXTN2010A
Diodes Incorporated
Diodes Incorporated
TRANS NPN 60V 4.5A E-LINE
$1.01
Available to order
Reference Price (USD)
1+
$1.00000
10+
$0.89200
100+
$0.69550
500+
$0.57456
1,000+
$0.45360
Exquisite packaging
Discount
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Choose ZXTN2010A by Diodes Incorporated for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, ZXTN2010A is a versatile solution. Ready to order? Submit your inquiry today and let Diodes Incorporated provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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